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| PD -96176 IRF7524D1GPBF FETKYTM MOSFET & Schottky Diode l l l l l l l Co-packaged HEXFET(R) Power MOSFET and Schottky Diode P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint Lead-Free Halogen-Free A A S G 1 2 3 4 8 7 6 5 K K D D VDSS = -20V RDS(on) = 0.27 Schottky Vf = 0.39V Top View Description The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications like cell phone, PDA, etc. The new Micro8 package, with half the footprint area of the standard SO-8, provides TM the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low TM profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. TM Micro8 TM Absolute Maximum Ratings Parameter ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range Maximum -1.7 -1.4 -14 1.25 0.8 10 12 -5.0 -55 to +150 Units A W mW/C V V/ns C Thermal Resistance Ratings Parameter RJA Junction-to-Ambient Maximum 100 Units C/W Notes: Repetitive rating - pulse width limited by max. junction temperature (see Fig. 9) ISD -1.2A, di/dt 100A/s, VDD V(BR)DSS, TJ 150C Pulse width 300s - duty cycle 2% When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance www.irf.com 1 09/16/08 IRF7524D1GPBF MOSFET Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Parameter Continuous Source Current(Body Diode) Pulsed Source Current (Body Diode) Body Diode Forward Voltage Reverse Recovery Time (Body Diode) Reverse Recovery Charge Parameter Max. Average Forward Current Max. peak one cycle Non-repetitive Surge current Min. -20 --- --- -0.70 1.3 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Min. --- --- --- --- --- Typ. --- 0.17 0.28 --- --- --- --- --- --- 5.4 0.96 2.4 9.1 35 38 43 240 130 64 Typ. --- --- --- 52 63 Max. Units Conditions --- V VGS = 0V, ID = -250A 0.27 VGS = -4.5V, ID = -1.2A 0.40 VGS = -2.7V, ID = -0.60A --- V VDS = VGS, ID = -250A --- S VDS = -10V, ID = -0.60A -1.0 VDS = -16V, VGS = 0V A -25 VDS = -16V, VGS = 0V, TJ = 125C -100 VGS = -12V nA 100 VGS = 12V 8.2 ID = -1.2A 1.4 nC VDS = -16V 3.6 VGS = -4.5V, See Fig. 6 --- VDD = -10V --- ID = -1.2A ns --- RG = 6.0 --- RD = 8.3, --- VGS = 0V --- pF VDS = -15V --- = 1.0MHz, See Fig. 5 Max. Units Conditions -1.25 A -9.6 -1.2 V TJ = 25C, IS = -1.2A, VGS = 0V 78 ns TJ = 25C, IF = -1.2A 95 nC di/dt = 100A/s Conditions 50% Duty Cycle. Rectangular Wave, TA = 25C TA = 70C See Fig.14 5s sine or 3s Rect. pulse Following any rated 10ms sine or 6ms Rect. pulse load condition & with VRRM applied Conditions IF = 1.0A, TJ = 25C IF = 2.0A, TJ = 25C IF = 1.0A, TJ = 125C IF = 2.0A, TJ = 125C . VR = 20V TJ = 25C TJ = 125C VR = 5Vdc ( 100kHz to 1 MHz) 25C Rated VR MOSFET Source-Drain Ratings and Characteristics IS I SM VSD t rr Q rr Schottky Diode Maximum Ratings IF(av) I SM Max. Units 1.9 A 1.4 120 11 A Schottky Diode Electrical Specifications VFM Parameter Max. Forward voltage drop Max. Units 0.50 0.62 V 0.39 0.57 0.02 mA 8 92 pF 3600 V/ s IRM Ct dv/dt Max. Reverse Leakage current Max. Junction Capacitance Max. Voltage Rate of Charge ( HEXFET is the reg. TM for International Rectifier Power MOSFET's ) 2 www.irf.com IRF7524D1GPBF Power Mosfet Characteristics 10 VGS -7.50V -5.00V -4.00V -3.50V -3.00V -2.50V -2.00V BOTTOM -1.50V TOP 10 -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) VGS -7.50V -5.00V -4.00V -3.50V -3.00V -2.50V -2.00V BOTTOM -1.50V TOP 1 1 0.1 0.1 -1.50V -1.50V 1 0.01 0.1 20s PULSE WIDTH TJ = 25 C 10 -VDS , Drain-to-Source Voltage (V) 0.01 0.1 20s PULSE WIDTH TJ = 150 C 1 10 -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 10 2.0 -ID , Drain-to-Source Current (A) TJ = 25C TJ = 150C 1 R DS(on) , Drain-to-Source On Resistance (Normalized) I D = -1.2A 1.5 1.0 0.1 0.5 0.01 1.5 2.0 2.5 3.0 VDS = -10V 20s PULSE WIDTH 3.5 4.0 4.5 5.0 A 0.0 -60 -40 -20 0 20 40 60 80 V GS = -4.5V 100 120 140 160 A -VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature (C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7524D1GPBF Power Mosfet Characteristics 500 400 -VGS , Gate-to-Source Voltage (V) V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd 10 I D = -1.2A VDS = -16V 8 C, Capacitance (pF) Ciss 300 Coss 6 200 4 Crss 100 2 0 1 10 100 A 0 0 2 4 FOR TEST CIRCUIT SEE FIGURE 9 6 8 10 A -VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 10 100 -ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 150C 1 -I D , Drain Current (A) 10 100s TJ = 25C 0.1 1ms 1 10ms 0.01 0.4 0.6 0.8 1.0 VGS = 0V A 1.2 0.1 1 TA = 25C TJ = 150C Single Pulse 10 -VSD , Source-to-Drain Voltage (V) 100 A -VDS , Drain-to-Source Voltage (V) 4 Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com IRF7524D1GPBF Power Mosfet Characteristics 1000 Thermal Response (Z thJC ) 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.01 0.1 1 10 100 0.1 0.00001 0.0001 0.001 t1 , Rectangular Pulse Duration (sec) Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient R DS (on), Drain-to-Source On Resistance () RDS (on) , Drain-to-Source On Resistance 0.8 R DS (on), Drain-to-Source On Resistance () RDS (on) , Drain-to-Source On Resistance 1.0 0.300 0.250 0.6 VGS = -2.5V 0.4 ID = -1.7A 0.200 VGS = -5.0V 0.2 0.150 0.0 0.0 0.5 1.0 1.5 2.0 0.100 2 3 4 5 6 7 8 -ID , Drain Current (A) -VGS , Gate-to-Source Voltage (V) Fig 10. Typical On-Resistance Vs. Drain Current Fig 11. Typical On-Resistance Vs. Gate Voltage www.irf.com 5 IRF7524D1GPBF Schottky Diode Characteristics 10 100 10 TJ = 150C 125C 100C 75C 50C 25C Reverse Current - IR (mA) 1 0.1 0.01 0.001 0.0001 Instantaneous Forward Current - IF (A) ) 0 4 8 12 16 20 Reverse Voltage - V R (V) 1 TJ = 150C TJ = 125C Fig. 13 - Typical Values of Reverse Current Vs. Reverse Voltage Allowable Ambient Temperature - (C) TJ = 25C 160 140 120 100 80 60 40 20 0 0.0 0.5 1.0 1.5 V r = 20V R thJA = 100C/W Square wave 0.1 0.0 0.2 0.4 0.6 0.8 1.0 D = 3/4 D = 1/2 D =1/3 D = 1/4 D = 1/5 DC Forward Voltage Drop V (V) Forward Voltage Drop --VFFM (V) A 2.0 2.5 3.0 Fig. 12 -Typical Forward Voltage Drop Characteristics Average Forward Current - I F(AV) (A) Fig.14 - Maximum Allowable Ambient Temp. Vs. Forward Current 6 www.irf.com IRF7524D1GPBF Micro8 Package Outline Dimensions are shown in milimeters (inches) Micro8 Part Marking @Y6HQG@)AUCDTADTA6IADSA&$!#9 BQ7A GPUA8P9@AYY Q6SUAIVH7@S 96U@A8P9@AXAAT@@AU67G@ A2A@6S XA2AX@@F QA2A9@TDBI6U@TAG@69AAAS@@ QSP9V8UAPQUDPI6G BA2A9@TDBI6U@TAC6GPB@IAAAS@@ XXA2A !%ADAAQS@8@9@9A7AG6TUA9DBDUAPAA86G@I96SA@6S @6S ! !! !" !# !$ !% !& !' !( ! ! " # $ % & ' ( XPSF X@@F ! " # X 6 7 8 9 !# !$ !% XPSF X@@F !& !' !( " Y a XXA2A!&$!ADAAQS@8@9@9A7A6AG@UU@S @6S ! !! !" !# !$ !% !& !' !( ! 6 7 8 9 @ A B C E F X 6 7 8 9 $ $ $! Y a Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ www.irf.com 7 IRF7524D1GPBF Micro8TM Tape & Reel TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. OUTLINE CONFORMS TO EIA-481 & EIA-541. 2. CONTROLLING DIMENSION : MILLIMETER. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 09/2008 8 www.irf.com |
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